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| www..com UNISONIC TECHNOLOGIES CO., LTD PNP SILICON TRANSISTOR 1 2SB649/A BIPOLAR POWER GENERAL PURPOSE TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB669/A SOT-89 1 TO-126 1 TO-126C 1 TO-92 *Pb-free plating product number: 2SB649L/2SB649AL ORDERING INFORMATION Order Number Normal Lead Free Plating 2SB649-x-AB3-R 2SB649L-x-AB3-R 2SB649-x-T6C-K 2SB649L-x-T6C-K 2SB649-x-T60-K 2SB649L-x-T60-K 2SB649-x-T92-B 2SB649L-x-T92-B 2SB649-x-T92-K 2SB649L-x-T92-K 2SB649A-x-AB3-R 2SB649AL-x-AB3-R 2SB649A-x-T6C-K 2SB649AL-x-T6C-K 2SB649A-x-T60-K 2SB649AL-x-T60-K 2SB649A-x-T92-B 2SB649AL-x-T92-B 2SB649A-x-T92-K 2SB649AL-x-T92-K Package SOT-89 TO-126C TO-126 TO-92 TO-92 SOT-89 TO-126C TO-126 TO-92 TO-92 Pin Assignment 1 2 3 B C E E C B E C B E C B E C B B C E E C B E C B E C B E C B Packing Tape Reel Bulk Bulk Tape Box Bulk Tape Reel Bulk Bulk Tape Box Bulk 2SB649L-x-AB3-R (1)Packing Type (2)Package Type (3)Rank (4)Lead Plating (1) B: Tape Box, K: Bulk, R: Tape Reel (2) AB3: SOT-89, T6C: TO-126C, T60: TO-126, T 92: TO-92 (3) x: refer to Classification of hFE (4) L: Lead Free Plating, Blank: Pb/Sn www.unisonic.com.tw Copyright (c) 2005 Unisonic Technologies Co., Ltd 1 of 4 QW-R204-006,D www..com 2SB649/A PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Peak Current Collector Power Dissipation Junction Temperature Storage Temperature TO-126/TO-126C TO-92 SOT-89 2SB649 2SB649A SYMBOL VCBO VCEO VEBO IC lC(PEAK) PD TJ TSTG PNP SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (Ta=25 , unless otherwise specified) RATING -180 -120 -160 -5 -1.5 -3 1.4 1 500 +150 -40 ~ +150 UNIT V V V A A W W mW C C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta=25 , unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Collector to Base Breakdown Voltage BVCBO IC=-1mA, IE=0 Collector to Emitter Breakdown 2SB649 BVCEO IC=-10mA, RBE= Voltage 2SB649A Emitter to Base Breakdown Voltage BVEBO IE=-1mA, IC=0 Collector Cut-off Current ICBO VCB=-160V, IE=0 hFE1 VCE=-5V, IC=-150mA (note) 2SB649 hFE2 VCE=-5V, IC=-500mA (note) DC Current Gain hFE1 VCE=-5V, IC=-150mA (note) 2SB649A hFE2 VCE=-5V, IC=-500mA (note) Collector-Emitter Saturation Voltage VCE(SAT) Ic=-600mA, IB=-50mA Base-Emitter Voltage VBE VCE=-5V, IC=-150mA Current Gain Bandwidth Product fT VCE=-5V,IC=-150mA Output Capacitance Cob VCB=-10V, IE=0, f=1MHz Note: Pulse test. MIN -180 -120 -160 -5 60 30 60 30 TYP MAX UNIT V V V A -10 320 200 -1 -1.5 140 27 V V MHz pF CLASSIFICATION OF hFE RANK RANGE B 60-120 C 100-200 D 160-320 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 4 QW-R204-006,D www..com 2SB649/A TYPICAL CHARACTERISTICS Typical Output Characteristecs .5 PNP SILICON TRANSISTOR Typical Transfer Characteristics -500 Collector Current, I C (mA) VCE=-5V -100 1.0 Collector Current, IC (A) 0.8 0.6 0.4 0.2 0 - 4. .5 - 3 .0 -3 5 -2. -2.0 -4 . 5- 5 .05 TC=25 0W =2 PD -1.0 -0.5mA I B=0 -10 0 -10 -20 -30 -40 -50 -1 0 Collector to Emitter Voltage, VCE (V) -0.2 -0.4 -0.6 -0.8 -1.0 Base to Emitter Voltage, VBE (V) 350 DC Current Transfer Ratio, hFE DC Current Transfer Ratio vs. Collector Current -1.2 Collector to Emitter Saturation Voltage, VCE(SAT) (V) Collector to Emitter Saturation Voltage vs. Collector Current IC=10 IB -1.0 -0.8 -0.6 -0.4 -0.2 0 5 =7 TC 25 300 250 VCE=-5V 5 Ta=7 25 200 150 100 50 1 -1 -10 -100 -1,000 -25 25 -2 5 -1.5 T a=7 5 -25 -1 -10 -100 -1,000 Collector Current, IC (mA) Collector Current, IC (mA) 1.2 Base to Emitter Saturation Voltage, VBE(SAT) (V) Base to Emitter Saturation Voltage vs. Collector Current IC=10IB 25 TC=25 75 240 Gain Bandwidth Product, fT (MHz) Gain Bandwidth Product vs. Collector Current VCE=5V Ta=25 1.0 0.8 0.6 0.4 0.2 0 200 160 120 80 40 0 10 1 3 10 30 100 300 1,000 Collector Current, IC (mA) 30 100 300 1,000 Collector Current, IC (mA) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 4 QW-R204-006,D www..com 2SB649/A TYPICAL CHARACTERISTICS(Cont.) PNP SILICON TRANSISTOR Collector Output Capacitance vs. Collector to Base Voltage Area of Safe Operation -3 ICmax (-13.3V, -1.5A) -1.0 -0.3 -0.1 -0.03 -0.01 -1 (-40V, -0.5A) 2SB649A DC Operation (TC=25 ) (-120V, -0.038A) (-160V,- 0.02A) 2SB649 -3 -10 -30 -100 -300 Collector Output Capacitance, Cob (pF) 200 50 20 10 5 2 -1 -3 -10 -30 -100 Collector Current, IC (A) 100 f=1MHz IE=0 Collector to Base Voltage, VCB (V) Collector to Emitter Voltage, VCE (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R204-006,D |
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